发明名称 GAS PURIFICATION PROCESS AND APPARATUS THEREFOR
摘要 <p>PURPOSE:To suppress the deterioration of a hydrogen occlusion alloy to effect stabilized gas purification for a long period of time by passing the gas containing a trace amount of hydrogen as an impurity through the layer filled with a hydrogen occlusion alloy to remove the hydrogen and degassing the alloy under vacuum conditions to effect its regeneration. CONSTITUTION:The crude gas containing less than 10,000ppm of hydrogen as an impurity is purified by the following 2 steps: (a) the crude gas is passed through a vessel filled with a hydrogen occlusion alloy to adsorb the hydrogen and give the purified gas, and (b) the hydrogen-occluding alloy in the vessel is degassed under vacuum conditions for regeneration. The crude gas is, for example, helium, argon or nitrogen gas containing a trace amount of hydrogen, less than 10,000ppm. The pressure in the process (a) is higher than the atmospheric pressure and lower than 10kg/cm<2> G and the vacuum pressure in the process (b) is preferably less than 100 Torr.</p>
申请公布号 JPH05310403(A) 申请公布日期 1993.11.22
申请号 JP19920117504 申请日期 1992.05.11
申请人 SUMITOMO SEIKA CHEM CO LTD 发明人 HARUNA KAZUO;UNO MASARU;MUKAI MITSUKAZU
分类号 B01D53/02;B01D53/04;C01B3/50;C01B3/56;C01B21/04;C01B23/00;(IPC1-7):C01B21/04 主分类号 B01D53/02
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