| 摘要 |
PURPOSE:To produce an ITO sputtering target ensuring a high sputtering rate and excellent in nodule controlling and cracking preventing properties by preparing a high density ITO sintered compact having specified sintering density and grain diameter. CONSTITUTION:Indium oxide powder having about 2mum average particle diameter is mixed with about <=20wt.% tin oxide powder having about 0.2-2mum average particle diameter and this powdery mixture is compacted by die compacting or other method. The resulting compact is repeatedly pressed with a cold isostatic press under about 3-5t/cm<2> pressure and sintering is carried out at about 1,250-1,600 deg.C to produce an ITO sintered compact having 90-100% sintering density and 1-20mum grain diameter. This sintered compact has high heat conductivity, high deflective strength and about <=1X10<-3>OMEGA.cm specific resistance. When it is used as a target, the highest sputtering rate is attained and the cracking of the target and the generation of nodules on the surface of the target can effectively be prevented. |
