| 摘要 |
PURPOSE:To prevent locally narrowing by the influence of irregular reflection in an exposing process, when an upper layer electrode wiring passing above a contact hole is formed, because the contact hole formed for connecting an electrode wiring next to a specified layer of a semiconductor device having multilayered wiring structure with a lower layer electrode wiring has inclination. CONSTITUTION:When a second layer electrode wiring 3b passing above a contact hole C formed for connecting an impurity diffusion layer 1 with a first layer electrode wiring 2 is formed, exposure is performed by using a photo mask having a light shielding pattern 10 whose width is increased at a part. |
