An overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same.

摘要

A capacitive differential pressure sensing device with pressure overrange protection and a method of making the same are described. The device employs a doped polysilicon diaphragm (18) overlying a cavity (16) in a doped single crystal silicon wafer (10) having a port (20) extending into the cavity (16) from the opposite side. The cavity floor (22) serves as an overrange protector.