| 摘要 |
PURPOSE:To form the highly precise resist pattern by single-time exposure without forming the resist pattern at other edge parts by providing one light shield pattern at the part of an edge of a phase shifter pattern which is required as a pattern, and exposing the part to requested pattern size. CONSTITUTION:The photomask is provided with the phase shifter pattern 11 and light shield pattern and when the size of the pattern to be formed is <=lambda/4NA, one light shield pattern 12 which has such a light shield pattern width W that alpha/4NA<=W<=3lambda/4NA (lambda: wavelength, NA: numerical aperture) is provided at the edge part of the necessary phase shifter pattern 11. |
