| 摘要 |
PURPOSE:To enable a memory cell region and a peripheral circuit region to be flattened by a method wherein the height of a substrate region surrounding the memory cell region is made to increase in thickness by the thickness of a first insulating film, and a second insulating film is provided covering the first insulating film and a first conductor film where the first insulating film is not provided. CONSTITUTION:A BPSG film 241 is made to grow on all the surface of a substrate as thick as a level difference between a memory cell region 210 and a peripheral circuit region 220, and the BPSG film 241 is anisotropically etched using a resist pattern 242, which covers all the surface of the peripheral circuit 220 and a part of a boundary region 230, as a mask. A BPSG film 241 is patterned so as to cover a region which extends from the peripheral circuit region 220 to the part 230P of the boundary region 230 close to the peripheral circuit 220. A BPSG film 243 made to grow thick enough to fill a hollow between the end 241P of the BPSG pattern 241 and a memory cell 210, and the BPSG film 241 and 242 are made to reflow by thermal treatment, whereby a level difference between the memory cell 210 and the periphery 220 can be eliminated. |
