发明名称 |
(B2) ;DENKAIHOSHUTSUSOSHIOYOBISONOSEIZOHOHO |
摘要 |
<p>PURPOSE:To efficiently manufacture a field emission (FEC) which has a resistance layer independent for every emitter. CONSTITUTION:(a) A cathode conductor 2, an insulation layer 3 and a gate 4 are laminated on an insulating substrate 1 to form a cavity 5 in the insulation layer 3 and the gate 4. (b) Si is evaporated to the insulating substrate 1 from a vertical direction to from a Si layer on the gate 4 and an independent resistance layer 7 on the cathode conductor 2 in the cavity 5. (c) The Si layer 6 is only oxidized with anode oxidation to form a peeled layer 8. Mo is evaporated to the insulating substrate 1 from a vertical direction to form an emitter 9 on the resistance layer 7. (d) The peeled layer 8 and an unnecessary layer 10 on the peeled layer 8 are removed to obtain a field emission component(FEC) which has the resistance layer 7 independent for every emitter 9.</p> |
申请公布号 |
JPH05299011(A) |
申请公布日期 |
1993.11.12 |
申请号 |
JP19920099420 |
申请日期 |
1992.04.20 |
申请人 |
FUTABA CORP |
发明人 |
WATANABE TERUO;ITO SHIGEO;OTSU KAZUYOSHI;TANIGUCHI MASATERU;NISHIMURA NORIO;OCHIAI HISATAKA;YAMAGUCHI MANABU |
分类号 |
H01J1/30;H01J1/304;H01J9/02;H01L21/027;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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