| 摘要 |
PURPOSE:To produce the phase difference mask which can decrease the number of stages by using a lift off method or shifter material forming film, a method for forming this shifter material by etching and a method for forming the shifter material having photosensitiveness with electron beams by exposing with the electron beams and developing for shifter formation. CONSTITUTION:A chromium mask 10 is set and resist patterns 14 are formed thereon. The film of the shifter material 15 is formed thereon and the EB resist patterns 14 are removed by the lift off method, by which the first shifter patterns P1 are formed. The photosensitive shifter material 16 is applied thereon and the patterning of this photosensitive shifter material 16 is executed, by which the second shifter patterns P2 and the third shifter patterns P3 are formed. |
