| 摘要 |
<p>PURPOSE:To decrease the electric charge of switch control signal of large load in quantity so as to lessen a semiconductor integrated circuit in power consumption by a method wherein switch control signal which used to be pre-charged up to a potential higher than that of an inner power supply is pre-charged to the potential of an inner power supply. CONSTITUTION:Switch control signals SW1 and SW2 are connected to P channel transistors 112 and 113 whose sources are connected to a VPP level, N channel transistors 114 and 115 whose sources are connected to a ground level, and N channel transistors 116 and 117 whose sources are connected to a VCC level, and the gates of these transistors are controlled by three-level output signals. Switch control signals are pre-charged to a VPP level on standby, only switch control signals on a selection memory block side are set to a VPP level at memory access, and switch control signals on a non-selection memory block side are set to a ground level. By this setup, the electric charge of switch control signal of large load can be lessened in quantity.</p> |
