MOS GATED THYRISTOR HAVING ON-STATE CURRENT SATURATION CAPABILITY

摘要

An emitter switched thyristor structure (100') providing on-state current saturation capability is disclosed herein. The thyristor structure includes anode (192') and cathode (196') electrodes, and a remote electrode (234') connected to the cathode electrode. A multi-layer body of semiconductor material (110') has a first surface (140') and includes regenerative (114') and non-regenerative (166') portions each operatively coupled between the anode and cathode electrodes. The regenerative portion includes adjacent first (116'), second (120'), third (130', 150') and fourth (158') regions of alternating conductivity type arranged respectively in series, wherein the remote electrode is in electrical contact with the second region and the anode electrode is in electrical contact with the fourth region. The emitter-switched thyristor is turned on by applying an enabling voltage to an insulated gate electrode (202', 216') disposed adjacent the first surface such that a conductive channel is created in the non-regenerative portion via modulation of the conductivity therein.