| 摘要 |
2134672 9322796 PCTABScor01 An emitter-switched thyristor structure (100) includes a remote turn-off electrode (202) for reducing turn-off time and increasing maximum controllable operating current. The switched thyristor structure further includes anode (190) and cathode (196) electrodes, with the remote electrode being connected to the cathode electrode. A multi-layer body of semiconductor material (110) has a first surface (140), as well as regenerative (114) and non-regenerative (166) portions each operatively coupled between the anode and cathode electrodes. The regenerative portion includes adjacent first (116), second (120), third (130, 150) and fourth (158) regions of alternating conductivity type arranged respectively in series. Electrical contacts exist between the remote electrode and the second region, as well as between the anode electrode and the fourth region. The thyristor is turned on by applying an enabling voltage to an insulated gate electrode (208, 216) disposed adjacent the first surface such that a conductive channel is created in the regenerative portion via modulation of the conductivity therein.
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