| 摘要 |
A selectably customizable semiconductor device including a first metal layer disposed in a first plane and including first elongate strips extending parallel to a first axis, a second metal layer disposed in a second plane generally parallel to and electrically insulated from said first plane and including second elongate strips extending parallel to a second axis, the second axis being generally perpendicular to the first axis, whereby a multiplicity of elongate strip overlap locations are defined at which the elongate strips of the first and second metal layers overlap in electrical insulating relationship; the second metal layer comprising a plurality of fusible conductive bridges joining adjacent pairs of the second elongate strips, each of the fusible conductive bridges including first and second fusible links; a via being defined between the first and second metal layers at a location along each of the fusible conductive strips intermediate the first and second fusible links; the fusible conductive bridges joining the adjacent pairs of the second elongate strips overlying alternating first elongate strips and being arranged in a staggered arrangement.
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