| 发明名称 |
Method for forming a Bi-containing superconducting oxide film on a substrate with a buffer layer of Bi2O3 |
| 摘要 |
A superconducting thin film of Bi-containing compound oxide deposited on a substrate, a buffer layer made of Bi2O3 being interposed between the superconducting thin film and the substrate.
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| 申请公布号 |
US5260267(A) |
申请公布日期 |
1993.11.09 |
| 申请号 |
US19920925066 |
申请日期 |
1992.08.04 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA, KEIZO;ITOZAKI, HIDEO |
| 分类号 |
H01L39/24;(IPC1-7):B05D5/12 |
主分类号 |
H01L39/24 |
| 代理机构 |
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