| 摘要 |
PURPOSE:To prevent delay in access speed in a static memory cell by only reducing the capacity between the word lines without reducing the capacitance between a polycrystalline silicon film being used for ground wiring and a memory cell point of contact. CONSTITUTION:A film thickness of a silicon oxide film 106 on the word lines 105a, 105c is thicker formed than a film thickness on a gate electrode 105b of a driving transistor so as to make the capacitance between the word lines 105a, 105c and a second layer polycrystalline silicon film 107 smaller than the gate electrode 105b of the driving transistor in order to reduce delay of the word lines. |
