| 摘要 |
<p>PURPOSE:To obtain a phase-shift photomask by using a high-hardness film excellent in etching selectivity as an etching stopper layer and also excellent in transparency. CONSTITUTION:The phase-shift photomask consists of at least a substrate 30 and a phase shifter pattern 44 consisting essentially of silicon oxide and provided on the substrate surface through a light-shielding pattern 37 or directly on the surface. An etching stopper layer 31 consisting of MgF6-2xOy, CaF2-2xOy, LiF2-2xOy, BaF2-2xOy, La2F6-2xOy or CaF6-2xOy is provided on the substrate 30 surface, and hence a phase shifter transparent film is surely and precisely etched by the etching stopper action of the layer when a phase shifter pattern is formed by etching.</p> |
