| 摘要 |
<p>PURPOSE:To prevent breakdown to surge from a source or an emitter of a transistor. CONSTITUTION:A region of a reverse conductivity of a substrate 12 is formed inside a region 14 which is isolated excepting a surface by a buried diffusion part 10 of a reverse conductivity of a substrate 12 and an epitaxial layer 11 which work as a drain (a collector in case of a bipolar transistor) below a bonding region of a source (or an emitter) wire 6 of a transistor. Thereby, a diode is formed, an anode 13 and a source electrode 15 of the diode are connected and the cathode 14 is connected to the bonding wire 6. Since a transistor main body is protected against surge from a reverse direction by providing withstand voltage by the diode in a reverse direction of the transistor, it is hardly broken down.</p> |
