| 摘要 |
PURPOSE:To make it possible to obtain the luminous wavelength of a blue or blue-green luminous region and to make it possible to obtain the light emission of this luminous wavelength at a high efficiency. CONSTITUTION:A buffer layer 12 consisting of an N-type ZnS0.07Se0.93 layer is formed on an N<+> GaAs substrate 11 and an N-type superlattice light-reflection layer 13 consisting of 50 layers of ZnSqSe1-q layers and ZnSrSe1-r layers, which are formed on the condition of q-0, r=1 and the thickness of each layer =50Angstrom , and an insulated multiquantum well luminous layer 14 consisting of ZnSxSe1-x layers, CdyZn1-ySe layers and ZnSxSe1-x layers, which are formed on the condition of x=0.1, y=0.2, the thickness of each layer=100Angstrom and the number of times of integration of each layer =5, and formed in order thereon. Moreover, a light-transmitting layer 15 consisting of a P-type ZnSpSe1-p layer, which is formed on the condition of p=0.1, is formed thereon, a semi-transparent electrode 16 is formed on the layer 15 and a lower electrode 17 is formed under the lower part of the substrate 11. |
