发明名称 THIN-FILM EL ELEMENT
摘要 <p>A thin-film EL element which does not permit the color of the emitted light to change irrespective of a change in the voltage, which remains chemically stable and which emits light of high brightness even on a low voltage. The element comprises two or more polycrystalline thin light-emitting layers (4, 5, 6) and one or more thin insulating layers (3, 7). The interface between a thin film and a thin film constituting the light-emitting layer is formed by epitaxial growth, and the electrical characteristics of the element is equivalent to those of a single circuit which includes two Zener diodes (12, 13) connected in series, a capacitor (14) connected in parallel with the series circuit of Zener diodes, and a capacitor (15) connected to one end of the capacitor (14).</p>
申请公布号 WO1993021744(P1) 申请公布日期 1993.10.28
申请号 JP1992000958 申请日期 1992.07.29
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