Verfahren zur Herstellung von Halbleiteranordnungen mit Isolationszonen.,申请号DE19863688757T-传众专利搜索

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发明名称	Verfahren zur Herstellung von Halbleiteranordnungen mit Isolationszonen.
摘要
申请公布号	DE3688757(T2)	申请公布日期	1993.10.28
申请号	DE19863688757T	申请日期	1986.03.27
申请人	MATSUSHITA ELECTRONICS CORP., KADOMA, OSAKA, JP	发明人	TAKEBAYASHI, KOJI, TAKATSUKI CITY, 569, JP
分类号	H01L21/76;H01L21/316;H01L21/762;H01L29/06;(IPC1-7):H01L21/76	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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