| 摘要 |
PURPOSE:To fix a crystal growing nucleus converted from a polymer on a whisker and grow a number of Si3N4 crystals from the growing nucleus in a dendric form by calcining a mixture of a beta-form Si3N4 whisker and an organic silicon polymer. CONSTITUTION:A beta-form silicon nitride whisker 2 is mixed with a solution of an organic silicon polymer (e.g. polycarbosilane) and the mixture is calcined in an N2 atmosphere to convert the organic silicon polymer into beta-SiC crystal. The beta-SiC crystal is fixed as a crystal growing nucleus 3 on the beta-form silicon nitride whisker 2 by this process. A number of silicon nitride crystals 4 are grown in dendric form from the crystal growing nucleus 3 by vapor-phase or liquid-phase growing process to form a dendric silicon nitride crystal particle 1. As an alternative method, a mixture of beta-form silicon nitride whisker and Si powder is calcined in an N2 gas atmosphere to fix a crystal growing nucleus on the whisker and dendric silicon nitride crystals are grown on the growing nucleus. |
