Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor

摘要

An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH3 is used as the phosphorus source. Layers of InP are grown at approximately 8 mu m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7x1015/cm3 and mu S 34,000 cm2/V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.