发明名称 |
Common geometry high voltage tolerant long channel and high speed short channel field effect transistors |
摘要 |
A field effect device transistor geometry and method of fabrication are described. The FET may be operated from a bias potential that forms an electrical field within the device exceeding a predetermined field strength. The device comprises a semiconductor substrate portion of a first conductivity type, said substrate portion having a major surface, and a region of a second conductivity type adjacent the major surface and adapted to receive the predetermined bias potential, the region including a subregion of like conductivity type and lesser conductivity, the subregion being positioned within the region such that the subregion receives at least that portion of the dipole electrical field including and exceeding the predetermined value.
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申请公布号 |
US5257095(A) |
申请公布日期 |
1993.10.26 |
申请号 |
US19900511853 |
申请日期 |
1990.04.19 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
LIU, YOW-JUANG (BILL);CAGNINA, SALVATORE |
分类号 |
H01L21/8236;H01L29/78;(IPC1-7):H01L29/10;H01L29/68 |
主分类号 |
H01L21/8236 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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