Method of forming film of tantalum oxide by plasma chemical vapor deposition

摘要

A method for depositing a thin film of tantalum oxide (Ta2O5) with a large capacitance per unit area on a silicon surface by a plasma CVD process. The plasma used in the CVD process is generated by a high-frequency energy with a gas containing tantalum chloride (TaCl5) and dinitrogen oxide (N2O). The intensity of the high-frequency energy increases from the start of the formation of the film of tantalum oxide until the end of the formation of the film. Increasing the intensity of the energy causes suppression of the growth of silicon oxide layers which are generated with the reactive plasma sputtering process going at the same time with the CVD process on the silicon surface.