| 摘要 |
<p>PURPOSE:To precisely evaluate a surface film by measuring the differential spectrum from the infrared absorption spectrum based on the presence of the surface film, and obtaining the infrared absorption spectrum of only the surface film. CONSTITUTION:Infrared rays are transmitted through a silicon crystal 2 containing impurities such as an oxygen material and stuck with a surface film 1 on the surface, and the infrared absorption spectrum of the silicon crystal 2 having the surface film 1 is measured. The film 1 of the crystal 2 is removed via the surface etching treatment with a hydrofluoric acid solution, for example. Infrared rays are transmitted through a film-less silicon crystal 2 removed with the film 1 and containing impurities such as the oxygen material, and the infrared absorption spectrum of the crystal 2 is measured. When the differential spectrum is calculated based on the characteristics of both measured results respectively, the characteristic of the differential spectrum is obtained. The differential spectrum is the same as the infrared absorption spectrum obtained when infrared rays are transmitted through only the film 1, and this differential spectrum can be used as the infrared absorption spectrum of only the film 1.</p> |
