| 摘要 |
PURPOSE:To facilitate control of the form of contact holes and to improve a coverage in the contact holes in the uppermost layer wiring layer by a method wherein at the time of formation of a multilayer interconnection layer, the depths of the contact holes are held uniform before the uppermost layer wiring layer is formed. CONSTITUTION:For example, in the case where a semiconductor device having a three-layer wiring layer laminated on a semiconductor substrate 1 is manufactured, first contact holes, through which a first layer wiring layers 3a and 5a are exposed, are first formed and after a first conductive film is deposited on the whole surface, a paterning is performed to form connection layers 10b and 10c, which are respectively connected to a second layer wiring layer 10a and the layer 3a and 5a. Then, after insulating films 11 and 12 are deposited on the whole surface, second contact holes 13a, 13b and 13c through which the layer 10a and the layers 10b and 10c are respectively exposed, are formed. After a second conductive film is deposited on the whole surface, a patterning is performed to form the third layer wiring layers 14a, 14b and 14c, which are respectively connected to the layer 10a and the layers 10b and 10c. |
