发明名称 |
Charge transfer apparatus. |
摘要 |
<p>The present invention is directed to a charge transfer apparatus. A reset gate (RG) is formed of an N-channel MOSFET of depletion type in which a carrier concentration of a channel region is set in a range from 10<1><5> to 5 x 10<1><6> cm<-><3>. Also, a circuit for generating a reset pulse that is supplied to the reset gate (RG) is constructed as follows. A drain voltage source (12) and a drain of a transistor (Tr) are connected via a junction (a), and two resistors (R1) and (R2) are connected in series between the anode of the drain voltage source (12) and the ground. A junction (b) between the resistors (R1) and (R2) and the reset gate (RG) are connected together via an input line (13) and a high resistance (Rh) is inserted into the input line (13). Further, a coupling capacitor (Cc) is connected between a clock pulse input terminal ( phi in) and the input line (13). Thus, an amount that a potential formed under the reset gate is fluctuated by a fluctuation of an amount of implanted impurities and a fluctuation of a drain voltage can be reduced and hence a stable reset operation can be carried out. <IMAGE></p> |
申请公布号 |
EP0566129(A1) |
申请公布日期 |
1993.10.20 |
申请号 |
EP19930106168 |
申请日期 |
1993.04.15 |
申请人 |
SONY CORPORATION |
发明人 |
HASEGAWA, KENJI;SUZUKI, JUNYA |
分类号 |
H01L29/762;G11C19/28;G11C27/04;H01L21/339;H04N5/335;H04N5/341;H04N5/369;H04N5/372;H04N5/374;H04N5/378;(IPC1-7):G11C19/28 |
主分类号 |
H01L29/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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