| 摘要 |
PURPOSE:To improve anti-corrosion property and also simplify removal of resist in resist ashing after wiring patterning. CONSTITUTION:After a wiring material layer of Al is formed on an insulation film 12 covering the surface of a semiconductor substrate 10, the wiring material layer is selectively etched by Cl gas with a resist layer 16 as a mask to form a wiring layer 14. Then ashing of the resist layer 16 is performed while plasma of F, H-containing O2 gas such as O2/CHF3/CH3OH is used and the substrate 10 is not heated. In this case since Cl components are removed in the form of HCl and also excessive H components are removed in the form of HF to suppress the production and deposition of H2O, anti-corrosion performance is improved. In addition, since the substrate is not heated, transformation and setting of the resist can be suppressed so that removal of resist is easy. Then ashing may be performed by using plasma of F-containing O2 gas such as O2/CHF3. |
