| 摘要 |
PURPOSE:To eliminate limitation on the size of a beam through hole of a CP cell formed on a beam shaping aperture mask, suppress the beam deflection amount at the time of controlling the beam at a desired position of the aperture mask and improve the drawing speed and drawing accuracy. CONSTITUTION:This is a charged beam lithography method for drawing a desired pattern by using a beam obtained by optically overlapping a rectangular beam-passing hole 35a formed in a first beam shaping aperture mask 36 and rectangular beam-passing holes 36a, 36b formed in a second beam shaping aperture mask 36 or beam-passing holes 36c, 36d whose shape correspond to the unit pattern shape of a repeated pattern part. When a repeated pattern is written, a beam which has passed through the beam through hole 35a is selectively projected to the beam through hole 36c or 36d to generate a corresponding beam at a part of the unit pattern shape. |
