| 摘要 |
<p>PURPOSE:To enable a light parallel processing memory provided with a light coupling function to be manufactured by a method wherein a resonator mirror composed of an active layer of InGaAs and semiconductor multilayer film of GaAs/AlAs or GaAs/AlGaAs and a phototransistor of InP material are provided. CONSTITUTION:A bias voltage is applied between an anode and a cathode far applying a power, and light rays are made to impinge on the rear of a substrate. The incident light is set shorter in wavelength than the absorption end of In0.53Ga0.47As used for a base. In result, a current is made to flow through a phototransistor and a surface emission laser. When the current concerned exceeds the oscillation threshold value of the surface emission laser, the laser starts oscillating, so that laser beams can be obtained from the upside of the substrate. Furthermore, an N-type semiconductor multilayer film is adjusted in number of layers to be set in reflectivity so as to enable laser rays to be obtained from the substrate, the laser beams concerned are absorbed by the phototransistor, and the phototransistor can be kept emitting light even after light rays are stopped to impinge on the substrate.</p> |
