Trägerelement für Halbleiterapparat.

摘要

A member for a semiconductor apparatus for carrying or holding a semiconductor device (4), obtained by joining an aluminum nitride substrate (1) and a radiating substrate (6), comprises an insulating member (1) formed by an aluminum nitride sintered body to be provided thereon with the semiconductor device (4) and a radiating member (6) to be joined to the insulating member. A metal material for forming the radiating member has thermal conductivity of at least 120 W/mK and a thermal expansion coefficient within a range of 4 to 6.0 x 10<-><6>/K<-><1>. Preferably the material forming the radiating member is prepared by a tungsten alloy containing copper by not more than 5 percent by weight.