Reverse polysilicon CMOS fabrication

摘要

A CMOS integrated circuit such as a DRAM is fabricated, in which a first layer of polysilicon is used to form transistor gates, and capacitor cell plates are formed from a second polysilicon layer. N-wells are first formed, followed by initial oxide. The application of the CMOS process to the reverse poly technique provides enhanced alignment of critical transistor gates and permits the use of less mask steps in fabricating the CMOS circuit.