| 摘要 |
PURPOSE:To reduce variation of dielectric breakdown voltage of a capacitor insulation film for MOS capacitive devices and enhance the reliability of the capacitor insulation film. CONSTITUTION:A P<+> type channel stopper 2 and a field oxide film 3 are formed on a P-type silicon substrate 1. After its formation, a sacrifice oxide film 7 is formed. Then, arsenic is implanted through the sacrifice oxide film 7 with a photoresist 8 as a mask, thereby forming an N<+> diffusion layer 4. Then, the photoresist 8 is eliminated. After the sacrifice oxide film 7 is etched, a capacitor oxide film 5 is formed. Then, polysilicon 6, which serves as an upper electrode, is formed. Therefore, the P<+> type channel stopper 2 is separated from the N<+> diffusion layer 4, and so it is possible to prevent the capacitor insulation film 5 from being deteriorated. |
