| 摘要 |
PURPOSE:To obtain a resist pattern superior in sensitivity, and developability, resolution, and heat resistance by using an alkali-soluble resin, a quinonediazido compound, and a specified compound. CONSTITUTION:The photoresist composition comprises the alkali-soluble resin, the quinonediazido compound, and the compound represented by the formula in which R is, independently H, a halogen, an alkyl, an alkoxy, a nitro, an alkenyl, an aryl, an aralkyl, an alkoxy- or an aryl-carbonyl, an acyloxy, an acyl, an aryloxy, or an aralkoxy; (l) is an integer of 1-4; (m) is 1, 2, or 3, and l+m=5; and (n) is 0 or 1. The alkali-soluble resin can be embodies by novolak resins, acetone-pyrogallol resins, polyhydroxystyrenes and their derivatives. |
