| 摘要 |
PURPOSE:To improve the resolution of a pattern by applying a specific polymer and a resist on a substrate, exposing a resist to light of a specific wavelength and developing to form a resist pattern. CONSTITUTION:The polymer expressed by the formula and the resist are successively applied on the substrate and the resist is exposed to <= light of 250mm wavelength and is developed to form the resist pattern. In the formula, each of R1-R3 is an alkyl group, (n) is positive integer. Also the substrate is etched by using the resist pattern as a mask. In this case, the surface of the substrate is preferably a metallic film containing silicon or tungsten. The substrate is not affected by the reflection of the substrate since the polymer expressed by the formula excellently absorbs KrF (248nm), ArF (193nm) of light for excimer laser exposure. Also the polymer expressed by the formula containing large quantity of silicon (Si) and being etched with the substrate by etching with the use of geseous halogen does not disturb etching. |
