发明名称 INSTRUMENT FOR MEASURING FINE STRUCTURE ON SURFACE OF THIN FILM
摘要 PURPOSE:To provide an instrument for easily and accurately obtaining information about outermost atomic layers of a thin film. CONSTITUTION:A sample 8 set on a sample stage 7 in a superhigh-vacuum chamber 5 is irradiated with an electron beam 5 emitted from an electron gun 1 through a focusing lens 2, diaphragm 3, and objective lens 4. By detecting and analyzing the reflected secondary electrons from the irradiated part by means of a secondary electron detector 9 provided on the side wall of the chamber 6 at nearly the same level as that of the sample, the structure of the outermost surface of the sample 8, such as the distance between nearest atoms, etc., can be found.
申请公布号 JPH05256801(A) 申请公布日期 1993.10.08
申请号 JP19920087893 申请日期 1992.03.11
申请人 发明人
分类号 G01N23/22 主分类号 G01N23/22
代理机构 代理人
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