| 摘要 |
In a semiconductor device in which copper or copper alloy bonding wire (16) is bonded to an electrode pad (21) on a semiconductor element (13), the electrode pad (21) is formed of a first metal layer (18) ohmically contacting the semiconductor element, a second metal layer (19) hard enough not to be deformed at wire bonding step, and a third metal layer (20) for bonding a copper wire, to suppress variation in the electric characteristics of a bonding portion and the production of stain in the semiconductor element at wire bonding step. |
