| 摘要 |
PURPOSE:To obtain a semiconductor apparatus which can correct the temperature dependency of the sensitivity of a stress converter which converts the stress to electric signals by the piezoresistance effect, and the difference of the sensitivity among the individual apparatuses. CONSTITUTION:This apparatus is provided with a reference voltage source 18 showing the temperature dependency corresponding to the temperature characteristic of the sensitivity of a stress converter which has a bridge circuit constituted of resistances 2a-2d of the piezoresistance effect, and a voltage converter consisting of resistances 20, 21 and an operational amplifier 19. The reference voltage of the reference voltage source 18 is, via the voltage converter, applied to the stress converter. The ratio of the voltage impressed by the voltager converter to the stress converter to the reference voltage is selectively set by the resistance 20 forming an operational impedance of the operational amplifier 19. The temperature characteristic of the reference voltage compensates for the temperature characteristic of the stress converter. At the same time, the voltage converted by the voltage converter is adjusted to correct the variation of the sensitivity of each semiconductor apparatus. |
