| 摘要 |
The method for manufacturing a bipolar transistor using polysilicon suitable for high integrated device having high performance is disclosed. The method includes the steps of forming an oxide layer on the substrate, forming a base region in the epitaxial layer formed in the substrate by selective ion implantation, removing the oxide layer selectively, forming a doped polysilicon, undoped polysilicon and oxide layer on the substrate successively, etching the oxide layer, undoped polysilicon and doped polysilicon selectively to remain on the emitter region and collector region selectively, forming an oxide layer and a nitride layer on the substrate successively to form the emitter and collector regions by auto doping of the impurity from the doped polysilicon to the substrate, anisotropic etching the nitride layer and the oxide layer to remain on the sidewall of the polysilicon selectively, forming the emitter electrode, collector electrode and base electrode. High integration is realised by reduction of the area of the emitter, base region.
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