| 摘要 |
<p>An improved antifuse uses metal penetration of either a P-N PN junction or a Schottky diode. The P-N junction or Schottky diode (11), is contacted by a diffusion barrier (14) such as TiN, W, Ti-W alloy, or layers of Ti and Cr, with a layer (15) of a metal such as Al, Al-Cu alloy, Cu, Au, or Ag on top of the diffusion barrier. The junction (11) is surrounded by an electrical isolation structure (13) which also serves to thermally isolate the said junction. When this junction is stressed with voltage pulse producing a high current density, severe joule heating occurs resulting in metal penetration of the diffusion barrier and the junction to form a metal contact (15'). The voltage drop across the junction decreases by about a factor of ten after the current stress and is stable thereafter. Alternatively, a shallow P-N junction in a silicon substrate is contacted by a layer of metal that forms a silicide, such as Ti, Cr, W, Mo, or Ta. Stressing the junction with a voltage pulse to produce a high current density results in the metal penetrating the junction and reacting with the substrate to form a silicide. <IMAGE></p> |
