| 摘要 |
PURPOSE:To provide a light emitting device which is equipped with the junction between a P-type semiconductor and an N-type semiconductor and caused to emit a light by forward application of a voltage across the junction, and which is constant in the increase ratio of the quantity of light for the increase of the current and easy in controlling the quantity of light when used with various equipment. CONSTITUTION:A P-type GaAsP semiconductor 1 as a P-type semiconductor layer is formed in an N-type GaAsP semiconductor 3, and an N-type GaAsP semiconductor 2 as an N-type semiconductor layer is formed so as to cover the portion where the PN junction is exposed in the surface, but except the portion where a positive electrode 4 is to be placed, thereby to reduce the PN junction exposed in the surface for suppressing the generation of a current component proportional to exp (ev/2kT) which is not related to light emission. |
