| 摘要 |
<p>PURPOSE:To obtain a thin film electric field effect type transistor capable of giving the same field through voltage to any picture elements within a screen by making the parasitic capacity constant for the thin film field effect type transistor. CONSTITUTION:Two TFTs are connected in parallel to one picture element for a chromium gate electrode 3 in such a manner that a drain electrode and a source electrode are located oppositely each other. As a result, overlap between gate electrode and drain electrode is deviated. And even through the CGS of an upper TFT increases or decreases, the CGS of a lower TFT decreases or increases by the same capacity so that the total value of CGSs remains constant.</p> |
