| 摘要 |
PURPOSE:To provide a pattern formation method wherein the limit of the fineness of a pattern can be enhanced further in a silylating image reversal process regarding the pattern formation method by a two-layer silylating image reversal process by a method wherein, after an upper-layer photosensitive resin film has been patterned by a selective exposure operation and a development operation, a lower-layer resin film is silylated and removed selectively. CONSTITUTION:The title formation method is constituted by including the following: a process wherein a photosensitive resin film 14 on a resin film 13 on a body 12 to be patterned is patterned by a selective exposure operation and a development operation; a process wherein the surface of the resin film 13 is irradiated with a beam of light at a prescribed angle in a range which is larger than 0 deg. and smaller than 90 deg. by making use of a patterned photosensitive resin film 14a as a mask and a silylated layer 15 which contains silicon is formed on the surface layer of the resin film 13; and a process wherein a mask pattern film by the resin film 13 is formed by making use of the silylated layer 15 as a mask and a pattern composed of the body 12 to be patterned is formed by making use of the mask pattern film as a mask. |
