Semiconductor well structure and method.

摘要

A method of forming doped well regions in a semiconductor layer 14 is disclosed herein. At least one n-doped region 30 and at least one p-doped region 36 are formed in the semiconductor layer 14. The n-doped region 30 is separated from the p-doped region 36 by a separation region. An oxide layer 32 (38), for example silicon dioxide, is formed over the n-doped region 30 and p-doped region (36) but not over the separation region. The semiconductor layer 14 is then heated (e.g., at a temperature of less than 1150 DEG C) in a nitridizing environment such as ammonia. Other structures and methods are also disclosed.