Semiconductor integrated circuit device with multiplayered wiring

摘要

A semiconductor integrated circuit device capable of having a high integration density and excellent performance and a method of fabricating the semiconductor integrated circuit device are disclosed. In this semiconductor integrated circuit device, a connecting conductor for connecting gate wiring which is formed on a field oxide film and extended from the gate of a MOSFET, to the source/drain region of another MOSFET is interposed between the gate wiring and one of two side space layers for defining the width of the gate wiring.