发明名称 Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers
摘要 A technique for chemi-mechanical polishing of semiconductor wafers using ultrasonic energy is disclosed. A transducer is mounted in the polishing system, either to a platen to which the polishing pad is mounted, or to a carrier to which the semiconductor wafer is mounted. In either case, relative vibratory motion is established between the wafer and the polishing pad. The transducer may also be mounted within the reservoir containing the platen, carrier and polishing slurry, to agitate the slurry itself. By vibrating the polishing pad relative to the wafer, polish rate and repeatability are enhanced, the polishing process is less sensitive to pad use history, and the pad is somewhat self-conditioning.
申请公布号 US5245790(A) 申请公布日期 1993.09.21
申请号 US19920837444 申请日期 1992.02.14
申请人 LSI LOGIC CORPORATION 发明人 JERBIC, CHRIS
分类号 B24B1/04;B24B7/22;B24B37/04;B24B53/007;C30B33/00;H01L21/304;H01L21/306 主分类号 B24B1/04
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