CONTINUOUS PRODUCTION OF SILICON OXIDE FILM AND TRANSPARENT CONDUCTIVE FILM

摘要

PURPOSE:To decrease deterioration of resistivity of a conductive film and to obtain low resistivity by forming a multilayered transparent conductive film on a silicon oxide film by sputtering a quartz target in a specified gas atmosphere. CONSTITUTION:A carrier 15 can freely move in sputtering rooms 1, 2 and between these rooms. A silicon oxide film is formed on a substrate 14 on the carrier 15 by sputtering in the sputtering room 1 containing an oxide atmosphere of In2O3 with 10wt.% SnO2, while the carrier 15 is moved at a specified speed on the target ST. Then the carrier is made to pass through a valve 3 between the sputtering rooms 1, 2 and sent to the sputtering room 2. In the sputtering room 2, a transparent conductive film is continuously formed on the silicon oxide film on the substrate 14 by sputtering in Ar gas mixed with O2 gas while the carrier is moved at a specified speed on the target AT. Thus, an oxide film with high oxidization degree is formed on the substrate 14, the resistivity of the transparent conductive film after formed can be decreased.