| 摘要 |
The invention relates to a semiconductor device. According to the invention, in a surface of a layer (2) of the n- type which is formed on a substrate (1) of the p+ type, diffusion regions (3a, 3b and 3c) of the p type are formed which are separated by diffusion regions (4a, 4b) of the n+ type, and an oxidation film (9); above the regions (3a and 3b) are formed gate electrodes (5a and 5b) which are insulated from the environment by an oxidation film (6); an electrode (7) made of Al-Si is in contact with the diffusion region (3a) of p type, and the diffusion region (4a) of n+ type, while a metal electrode (8) is in contact with the substrate (1) of p+ type. The invention makes it possible particularly to make the controllable current high without exerting a harmful effect on other characteristics of the device. <IMAGE> |
