A semiconductor optical device in which a hetero-structure is constructed by sandwiching a semiconductor layer including a thin film made of a semiconductor or insulator between semiconductors having a larger band gap than that of the thin film so that the electron-hole pairs generated through the thin film may recombine by the tunnel effect to emit an optical beam. The optical device is equipped with electrodes for controlling the probability of said recombination.
申请公布号
DE3688490(T2)
申请公布日期
1993.09.16
申请号
DE19863688490T
申请日期
1986.02.07
申请人
HITACHI, LTD., TOKIO/TOKYO, JP
发明人
FUKUZAWA, TADASHI, TOKYO 156, JP;YAMADA, EIZABURO, TOKYO 206, JP;HIRUMA, KENJI, KOGANEI-SHI TOKYO 184, JP;MATSUMURA, HIROYOSHI, SAITAMA-KEN 350-12, JP