MANUFACTURING METHOD OF SEMICONDCUTOR SUBSTRATE HAVING COMPOSITE LAYER

摘要

The method for forming the chemical semiconductor layer with constant width on the single crystal silicon wafer comprises steps: (a) forming 1st and 2nd chemical semiconductor epitaxial layers; (b) forming the low temp. oxide layer and the polycrystal silicon layer; (c) forming groove by etching the all of layers; (d) forming the low temp. silicon oxide layer; (e) forming the low temp. silicon oxide layer on both side of the groove by etching; (f) polishing the exposed polycrystal silicon layer; (g) adhering the backside of the polycrystal silicon layer to the single crystal silicon wafer, and thermal treating and (h) exposing the 1st and 2nd chemical semiconductor epitaxial layers.