CMOS INVERTER STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

The method connects the output of the inverter by the common burying metal line and simplifies the process by the common poly- silicon gate line. The method includes: the process for forming the oxidation layer (6); the process for forming the thin oxidation layer (8) and for forming the silicon (7); the process for forming the poly-silicon (9); the process for etching the poly-silicon and the SOG (10); the process for forming the trench and the source of N-MOS and P-MOS; and the process for forming the oxidation layer (12) and the metal (13) after the contact forming.